Wide field-of-view (FOV) optics are essential components in many optical systems, with applications spanning imaging, display, sensing, and beam steering. Conventional refractive wide FOV optics often involve multiple stacked lenses, resulting in large size and weight as well as high cost. Metasurface lenses or metalenses promise a viable solution to realizing wide FOV optics without complex lens assembly. We review the various architectures of wide FOV metalenses, elucidate their fundamental operating principles and design trade-offs, and quantitatively evaluate and contrast their imaging performances. Emerging applications enabled by wide FOV metasurface optics are also discussed.

Wide field-of-view (FOV) optics are widely used in various imaging, display, and sensing applications. Conventional wide FOV optics rely on complicated lens assembly comprising multiple elements to suppress coma and other Seidel aberrations. The emergence of flat optics exemplified by metasurfaces and diffractive optical elements (DOEs) offers a promising route to expand the FOV without escalating complexity of optical systems. To date, design of large FOV flat lenses has been relying upon iterative numerical optimization. Here, we derive, for the first time, to the best of our knowledge, an analytical solution to enable computationally efficient design of flat lenses with an ultra-wide FOV approaching 180°. This analytical theory further provides critical insights into working principles and otherwise non-intuitive design trade-offs of wide FOV optics.

Integrated photonics is poised to become a mainstream solution for high-speed data communications and sensing in harsh radiation environments, such as outer space, high-energy physics facilities, nuclear power plants, and test fusion reactors. Understanding the impact of radiation damage in optical materials and devices is thus a prerequisite to building radiation-hard photonic systems for these applications. In this paper, we report real-time, in situ analysis of radiation damage in integrated photonic devices. The devices, integrated with an optical fiber array package and a baseline-correction temperature sensor, can be remotely interrogated while exposed to ionizing radiation over a long period without compromising their structural and optical integrity. We also introduce a method to deconvolve the radiation damage responses from different constituent materials in a device. The approach was implemented to quantify gamma radiation damage and post-radiation relaxation behavior of SiO2-cladded SiC photonic devices. Our findings suggest that densification induced by Compton scattering displacement defects is the primary mechanism for the observed index change in SiC. Additionally, post-radiation relaxation in amorphous SiC does not restore the original pre-irradiated structural state of the material. Our results further point to the potential of realizing radiation-hard photonic device designs taking advantage of the opposite signs of radiation-induced index changes in SiC and SiO2.

On-chip spectroscopic sensors have attracted increasing attention for portable and field-deployable chemical detection applications. So far, these sensors largely rely on benchtop tunable lasers for spectroscopic interrogation. Large footprint and mechanical fragility of the sources, however, preclude compact sensing system integration. In this paper, we address the challenge through demonstrating, for the first time to our knowledge, a supercontinuum source integrated on-chip spectroscopic sensor, where we leverage nonlinear Ge22Sb18Se60 chalcogenide glass waveguides as a unified platform for both broadband supercontinuum generation and chemical detection. A home-built, palm-sized femtosecond laser centering at 1560 nm wavelength was used as the pumping source. Sensing capability of the system was validated through quantifying the optical absorption of chloroform solutions at 1695 nm. This work represents an important step towards realizing a miniaturized spectroscopic sensing system based on photonic chips.